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SUM110P08-11
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
120
100
90
Package Limited
10
60
30
0
1
0.1
0
25
50
75
100
125
150
175
0.00001
0.0001
0.001
0.01
0.1
1.0
1
T C - (°C)
Max Avalanche and Drain Current
vs. Case Temperature
0.5
0.2
0.1
tin - (Sec)
Avalanche Current vs. Time
0.1
0.05
0.02
Single
0.01
0.0001
0.001
0.01
0.1
1
Normalized Thermal Transient Impedance, Junction-to-Case
*The power dissipation P D is based on T J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73472.
Document Number: 73472
S-70309-Rev. B, 12-Feb-07
www.vishay.com
5
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